| PART |
Description |
Maker |
| 28F320S3 DT28F320S3-140 GT28F320S3-140 TE28F320S3- |
WORD-WIDE FlashFile MEMORY FAMILY
Word-wide FlashFile memory. 32 Mbit, access speed 140 ns
|
Intel
|
| E28F160S5-100 E28F320S5-90 28F160S5 DA28F160S5-100 |
WORD-WIDE FLASHFILE MEMORY FAMILY
|
INTEL[Intel Corporation]
|
| DT28F320S5-120 DA28F320S5-120 |
Word-wide FlashFile memory. 32 Mbit, access speed 120 ns
|
Intel
|
| DD28F032SA DD28F032SA-080 DD28F032SA-070 DD28F032S |
32-MBIT (2 MBIT X 16/ 4 MBIT X 8) FlashFile MEMORY
32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFileMEMORY
32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile MEMORY 4M X 8 FLASH 12V PROM, 100 ns, PDSO56
|
Intel Corporation
Intel Corp.
PROM
Intel, Corp.
|
| 28F008S3 28F016S3 |
3 V FlashFile Memory(3V闪速存储器)
|
Intel Corp.
|
| MSM518222 MSM518222-25JS MSM518222-30JS MSM518222- |
From old datasheet system
262214-Word x 8-Bit Field Memory
262,214-Word x 8-Bit Field Memory
|
OKI SEMICONDUCTOR CO., LTD.
OKI[OKI electronic componets]
OKI electronic components
|
| HM514260CJ-8 HM514260CLJ-7 HM514260CLJ-8 HM514260C |
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
262,144-WORD X 16-BIT DYNAMIC RANDOM ACCESS MEMORY
60ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
|
HITACHI[Hitachi Semiconductor]
|
| M6MGB_T160S4BVP M6MGB M6MGB160S4BVP M6MGT160S4BVP |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
16,777,216-BIT CMOS 3.3V-ONLY FLASH MEMORY
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| HN29WT800 29WT800 |
1048576-word ′ 8-bit / 524288-word ′ 16-bit CMOS Flash Memory
From old datasheet system
|
hitachi
|
| HN29WB800R-10 HN29WB800R-12 HN29WB800R-8 HN29WB800 |
1048576-WORD X 8-BIT / 524288-WORD X 16-BIT CMOS FLASH MEMORY
|
Hitachi Semiconductor
|
